MRF8P23080HR3 MRF8P23080HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
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Typical Doherty Single--Carrier W--CDMA Performance: VDD
=28Volts,
IDQA
= 280 mA, VGSB
=0.7Vdc,Pout
= 16 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz
14.6
42.0
6.7
--29.5
2350 MHz
14.7
41.6
6.8
--31.5
2400 MHz
14.6
41.4
6.6
--32.5
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Capable of Handling 10:1 VSWR, @ 32 Vdc, 2350 MHz, 90 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
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Typical Pout
@ 3 dB Compression Point
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100 Watts CW
Features
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Production Tested in a Symmetrical Doherty Configuration
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100% PAR Tested for Guaranteed Output Power Capability
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Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
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Internally Matched for Ease of Use
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Integrated ESD Protection
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Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
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Designed for Digital Predistortion Error Correction Systems
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RoHS Compliant
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NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel.
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NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
CW Operation @ TC
=25°C
Derate above 25°C
CW
168
2.39
W
W/°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8P23080H
Rev. 1, 11/2010
Freescale Semiconductor
Technical Data
2300--2400 MHz, 16 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P23080HR3
MRF8P23080HSR3
(Top View)
GSA
31RFoutA/VDSA
Figure 1. Pin Connections
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P23080HSR3
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRF8P23080HR3
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Freescale Semiconductor, Inc., 2010.
All rights reserved.
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